Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 33.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2152pF @ 25V |
| Manufacturer | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Drain-to-Source Voltage | 100V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21A |
| Power - Max | 53W |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-1205, 8-LFPAK56 |
| Supplier Device Package | LFPAK56D |
| Grade | Automotive |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |