BSH205G2AR

Nexperia USA Inc

BSH205G2AR

Datasheet

Analog & Power

MOSFET P-CH 20V 2.6A TO236AB

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs118mOhm @ 2.6A, 4.5V
Base Product NumberBSH205
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds421 pF @ 10 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Max Power Dissipation610mW (Ta), 10W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

Environmental

Operating Temperature-55°C~175°C(TJ)