BSH201,215

Nexperia USA Inc

BSH201,215

Datasheet

Analog & Power

MOSFET P-CH 60V 300MA TO236AB

DiscontinuedTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.5Ohm @ 160mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds70 pF @ 48 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 1mA (Min)

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Max Power Dissipation417mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)