BSH114,215

Nexperia USA Inc

BSH114,215

Datasheet

Analog & Power

MOSFET N-CH 100V 500MA TO236AB

ObsoleteTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs500mOhm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds138 pF @ 25 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Max Power Dissipation360mW (Ta), 830mW (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)