BSH111BKR

Nexperia USA Inc

BSH111BKR

Datasheet

Analog & Power

MOSFET N-CH 55V 210MA TO236AB

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 200mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds30 pF @ 30 V
ManufacturerNexperia USA Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1.3V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C210mA (Ta)
Max Power Dissipation302mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)