Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 40A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
| Manufacturer | NEC Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-to-Source Voltage | 55 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max Power Dissipation | 1.8W (Ta), 115W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Operating Temperature | 175°C(TJ) |
|---|