2SJ606-ZK-E1-AY

NEC Corporation

2SJ606-ZK-E1-AY

Analog & Power

P-CHANNEL SWITCHING POWER MOSFET

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 42A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 10 V
ManufacturerNEC Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C83A
Max Power Dissipation120W

Mechanical

PackageBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-220SMD

Environmental

Operating Temperature150°C (TJ)