JAN2N7334

Microsemi Corporation

JAN2N7334

Datasheet

Analog & Power

MOSFET 4N-CH 100V 1A MO-036AB

Active14-DIP (0.300", 7.62mm)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs700mOhm @ 600mA, 10V
Configuration4 N-Channel
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
ManufacturerMicrosemi Corporation
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C1A
Power - Max1.4W

Mechanical

PackageBulk
Package / Case14-DIP (0.300", 7.62mm)
Supplier Device PackageMO-036AB

Environmental

GradeMilitary
Operating Temperature-55°C ~ 150°C (TJ)
QualificationMIL-PRF-19500/597