General
| Base Product Number | 2N3811 |
|---|---|
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Packaging | Bulk |
| Part Status | Obsolete |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 60V |
|---|---|
| Current - Collector (Ic) (Max) | 50mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Power - Max | 350mW |
Mechanical
| Package / Case | TO-78-6 Metal Can |
|---|---|
| Supplier Device Package | TO-78-6 |
Environmental
| Grade | Military |
|---|---|
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/336 |