General
| Base Product Number | 2N1016 |
|---|---|
| Manufacturer | Microsemi Corporation |
| Product Status | Active |
| Series | Military, MIL-PRF-19500/102 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 5A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
|---|---|
| Current - Collector (Ic) (Max) | 7.5 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 4V |
| Power - Max | 150 W |
Mechanical
| Package | Bulk |
|---|---|
| Supplier Device Package | TO-82 |
Environmental
| Operating Temperature | -65°C ~ 150°C (TJ) |
|---|