APTSM120AM55CT1AG

Microsemi Corporation

APTSM120AM55CT1AG

Analog & Power

SIC 2N-CH 1200V 74A SP1

ActiveSP1Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 40A, 20V
Base Product NumberAPTSM120
Configuration2 N-Channel (Dual), Schottky
Gate Charge (Qg) (Max) @ Vgs272nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds5120pF @ 1000V
ManufacturerMicrosemi Corporation
Mounting TypeChassis Mount
Product StatusActive
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id3V @ 2mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C74A (Tc)
Power - Max470W

Mechanical

PackageBulk
Package / CaseSP1
Supplier Device PackageSP1

Environmental

Operating Temperature-40°C ~ 175°C (TJ)