Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 19mOhm @ 50A, 10V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9880 pF @ 25 V |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Chassis Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 109A (Tc) |
| Max Power Dissipation | 480W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | SP1 |
| Supplier Device Package | SP1 |
| Operating Temperature | -40°C~150°C(TJ) |
|---|