APTM60A23FT1G

Microsemi Corporation

APTM60A23FT1G

Analog & Power

MOSFET 2N-CH 600V 20A SP1

ObsoleteSP1Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs276mOhm @ 17A, 10V
Base Product NumberAPTM60
Configuration2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5316pF @ 25V
ManufacturerMicrosemi Corporation
Mounting TypeChassis Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage600V
Current - Continuous Drain (Id) @ 25°C20A
Power - Max208W

Mechanical

PackageBulk
Package / CaseSP1
Supplier Device PackageSP1

Environmental

Operating Temperature-40°C ~ 150°C (TJ)