APTM100A12STG

Microsemi Corporation

APTM100A12STG

Analog & Power

MOSFET 2N-CH 1000V 68A SP3

DiscontinuedSP3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 34A, 10V
Base Product NumberAPTM100
Configuration2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs616nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds17400pF @ 25V
ManufacturerMicrosemi Corporation
Mounting TypeChassis Mount
Product StatusDiscontinued at
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 10mA

Electrical

Drain-to-Source Voltage1000V (1kV)
Current - Continuous Drain (Id) @ 25°C68A
Power - Max1250W

Mechanical

PackageBulk
Package / CaseSP3
Supplier Device PackageSP3

Environmental

Operating Temperature-40°C ~ 150°C (TJ)