APTC90DAM60CT1G

Microsemi Corporation

APTC90DAM60CT1G

Analog & Power

MOSFET N-CH 900V 59A SP1

ObsoleteSP1Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 52A, 10V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13600 pF @ 100 V
ManufacturerMicrosemi Corporation
Mounting TypeChassis Mount
Product StatusObsolete
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 6mA

Electrical

Drain-to-Source Voltage900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C59A (Tc)
Max Power Dissipation462W (Tc)

Mechanical

PackageBulk
Package / CaseSP1
Supplier Device PackageSP1

Environmental

Operating Temperature-40°C~150°C(TJ)