General
| Rds On (Max) @ Id, Vgs | 80mOhm @ 29A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 423 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8797 pF @ 25 V |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | POWER MOS V® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |