APT36N90BC3G

Microsemi Corporation

APT36N90BC3G

Analog & Power

MOSFET N-CH 900V 36A TO247

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 18A, 10V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7463 pF @ 25 V
ManufacturerMicrosemi Corporation
Mounting TypeThrough Hole
Product StatusObsolete
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 2.9mA

Electrical

Drain-to-Source Voltage900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Max Power Dissipation390W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

Environmental

Operating Temperature-55°C~150°C(TJ)