Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 20 V |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Chassis Mount |
| Product Status | Obsolete |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Max Power Dissipation | 175W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | D-3 Module |
| Supplier Device Package | D3 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|