General
| Capacitance @ Vr, F | 1135pF @ 0V, 1MHz |
|---|---|
| Manufacturer | Microsemi Corporation |
| Mounting Type | Surface Mount |
| Packaging | Tube |
| Part Status | Obsolete |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Average Rectified (Io) | 68A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
|---|---|
| Supplier Device Package | D3PAK |
Environmental
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|