Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | APT13GP120 |
|---|---|
| Gate Charge | 55 nC |
| IGBT Type | PT |
| Input Type | Standard |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | POWER MOS 7® |
| Switching Energy | 114µJ (on), 165µJ (off) |
| Td (on/off) @ 25°C | 9ns/28ns |
| Test Condition | 600V, 13A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 13A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 41 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 250 W |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 [K] |
| Operating Temperature | -55°C~150°C(TJ) |
|---|