Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | APT11G |
|---|---|
| Gate Charge | 40 nC |
| IGBT Type | PT |
| Input Type | Standard |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | POWER MOS 7® |
| Switching Energy | 46µJ (on), 90µJ (off) |
| Td (on/off) @ 25°C | 7ns/29ns |
| Test Condition | 400V, 11A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 11A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 41 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 187 W |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|