Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 500mOhm @ 12A, 10V |
|---|---|
| Base Product Number | 2N6770 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Manufacturer | Microsemi Corporation |
| Mounting Type | Through Hole |
| Packaging | Bulk |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 500 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Max Power Dissipation | 4W (Ta), 150W (Tc) |
| Package / Case | TO-254-3, TO-254AA (Straight Leads) |
|---|---|
| Supplier Device Package | TO-254AA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|