MT54V512H18EF-6

Micron Technology Inc

MT54V512H18EF-6

Memory & Storage

IC SRAM 9MBIT HSTL 165FBGA

Active165-TBGAMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeVolatile
TechnologySRAM - Synchronous
Access Time2.5 ns
ManufacturerMicron Technology Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesQDR™

Electrical

Memory Size9Mbit
Memory FormatSRAM
Memory InterfaceHSTL
Clock Frequency167 MHz
Supply Voltage2.4V ~ 2.6V
Memory Organization512K x 18

Mechanical

PackageBulk
Package / Case165-TBGA
Supplier Device Package165-FBGA (13x15)

Environmental

Operating Temperature0°C~70°C(TA)