MT53E512M64D2HJ-046 WT:B TR

Micron Technology Inc

MT53E512M64D2HJ-046 WT:B TR

Datasheet

Memory & Storage

IC DRAM LPDDR4 32G 512MX64 FBGA

Active556-TFBGAMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeVolatile
TechnologySDRAM - Mobile LPDDR4
Access Time3.5 ns
Base Product NumberMT53E512
ManufacturerMicron Technology Inc.
Mounting TypeSurface Mount
Product StatusActive
Write Cycle Time18ns

Electrical

Memory Size32Gbit
Memory FormatDRAM
Memory InterfaceParallel
Clock Frequency2.133 GHz
Supply Voltage1.06V ~ 1.17V
Memory Organization512M x 64

Mechanical

PackageTape & Reel (TR)
Package / Case556-TFBGA
Supplier Device Package556-TFBGA (12.4x12.4)

Environmental

Operating Temperature-25°C~85°C(TC)