MT53E512M32D1ZW-046 IT:B

Micron Technology Inc

MT53E512M32D1ZW-046 IT:B

Datasheet

Memory & Storage

IC DRAM 16GBIT 2.133GHZ 200WFBGA

Active200-TFBGAMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeVolatile
TechnologySDRAM - Mobile LPDDR4
Access Time3.5 ns
Base Product NumberMT53E512
ManufacturerMicron Technology Inc.
Mounting TypeSurface Mount
Product StatusActive
Write Cycle Time18ns

Electrical

Memory Size16Gbit
Memory FormatDRAM
Memory InterfaceParallel
Clock Frequency2.133 GHz
Supply Voltage1.06V ~ 1.17V
Memory Organization512M x 32

Mechanical

PackageTray
Package / Case200-TFBGA
Supplier Device Package200-TFBGA (10x14.5)

Environmental

Operating Temperature-40°C~95°C(TC)