VP2450N3-G

Microchip Technology

VP2450N3-G

Datasheet

Analog & Power

MOSFET P-CH 500V 100MA TO92-3

ActiveTO-226-3, TO-92-3 (TO-226AA)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30Ohm @ 100mA, 10V
Base Product NumberVP2450
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds190 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 1mA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100mA (Tj)
Max Power Dissipation740mW (Ta)

Mechanical

PackageBag
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

Environmental

Operating Temperature-55°C~150°C(TJ)