VP2206N3-G

Microchip Technology

VP2206N3-G

Datasheet

Analog & Power

MOSFET P-CH 60V 640MA TO92-3

ActiveTO-226-3, TO-92-3 (TO-226AA)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs900mOhm @ 3.5A, 10V
Base Product NumberVP2206
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeThrough Hole
PackagingBag
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 10mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C640mA (Tj)
Max Power Dissipation740mW (Tc)

Mechanical

Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)