VP2206N2

Microchip Technology

VP2206N2

Datasheet

Analog & Power

MOSFET P-CH 60V 750MA TO39

ActiveTO-205AD, TO-39-3 Metal CanAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs900mOhm @ 3.5A, 10V
Base Product NumberVP2206
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 10mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C750mA (Tj)
Max Power Dissipation360mW (Tc)

Mechanical

PackageBag
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39

Environmental

Operating Temperature-55°C~150°C(TJ)