VP2110K1-G

Microchip Technology

VP2110K1-G

Datasheet

Analog & Power

MOSFET P-CH 100V 120MA TO236AB

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12Ohm @ 500mA, 10V
Base Product NumberVP2110
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C120mA (Tj)
Max Power Dissipation360mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB (SOT23)

Environmental

Operating Temperature-55°C~150°C(TJ)