TP2510N8-G

Microchip Technology

TP2510N8-G

Datasheet

Analog & Power

MOSFET P-CH 100V 480MA TO243AA

ActiveTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.5Ohm @ 750mA, 10V
Base Product NumberTP2510
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds125 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C480mA (Tj)
Max Power Dissipation1.6W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-243AA
Supplier Device PackageTO-243AA (SOT-89)

Environmental

Operating Temperature-55°C~150°C(TJ)