TN5335N8-G

Microchip Technology

TN5335N8-G

Datasheet

Analog & Power

MOSFET N-CH 350V 230MA TO243AA

ActiveTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15Ohm @ 200mA, 10V
Base Product NumberTN5335
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage350 V
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Current - Continuous Drain (Id) @ 25°C230mA (Tj)
Max Power Dissipation1.6W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-243AA
Supplier Device PackageTO-243AA (SOT-89)

Environmental

Operating Temperature-55°C~150°C(TJ)