TN5335K1-G

Microchip Technology

TN5335K1-G

Datasheet

Analog & Power

MOSFET N-CH 350V 110MA SOT23

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15Ohm @ 200mA, 10V
Base Product NumberTN5335
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage350 V
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Current - Continuous Drain (Id) @ 25°C110mA (Tj)
Max Power Dissipation360mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23 (TO-236AB)

Environmental

Operating Temperature-55°C~150°C(TJ)