TN5325K1-G

Microchip Technology

TN5325K1-G

Datasheet

Analog & Power

MOSFET N-CH 250V 150MA TO236AB

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7Ohm @ 1A, 10V
Base Product NumberTN5325
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Max Power Dissipation360mW (Ta)

Mechanical

Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB (SOT23)

Environmental

Operating Temperature-55°C ~ 150°C (TA)