MSCSM120DDUM16TBL3NG

Microchip Technology

MSCSM120DDUM16TBL3NG

Datasheet

Analog & Power

SIC 4N-CH 1200V 150A

ActiveModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 80A, 20V
Base Product NumberMSCSM120
Configuration4 N-Channel, Common Source
Gate Charge (Qg) (Max) @ Vgs464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds6040pF @ 1000V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
PackagingBulk
Part StatusActive
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id2.8V @ 6mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C150A
Power - Max560W

Mechanical

Package / CaseModule

Environmental

Operating Temperature-55°C ~ 175°C (TJ)