MSCSM120DAM31CTBL1NG

Microchip Technology

MSCSM120DAM31CTBL1NG

Datasheet

Analog & Power

PM-MOSFET-SIC-SBD-BL1

ActiveModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs31mOhm @ 40A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3020 pF @ 1000 V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
Product StatusActive
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+25V, -10V
Vgs(th) (Max) @ Id2.8V @ 1mA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C79A
Max Power Dissipation310W

Mechanical

PackageBulk
Package / CaseModule

Environmental

Operating Temperature-55°C ~ 175°C (TJ)