MNS1N6627US/TR

Microchip Technology

MNS1N6627US/TR

Analog & Power

DIODE GEN PURP 440V 1.75A E-MELF

ActiveSQ-MELF, BAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)440 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 2 A
Current - Average Rectified (Io)1.75A
Current - Reverse Leakage @ Vr2 µA @ 440 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSQ-MELF, B
Supplier Device PackageE-MELF

Environmental

Operating Temperature - Junction-65°C ~ 150°C