Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1000Ohm @ 500µA, 0V |
|---|---|
| Base Product Number | LND150 |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 25 V |
| Manufacturer | Microchip Technology |
| Mounting Type | Through Hole |
| Packaging | Bag |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-to-Source Voltage | 500 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Tj) |
| Max Power Dissipation | 740mW (Ta) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
|---|---|
| Supplier Device Package | TO-92-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|