JANTXV1N6622US/TR

Microchip Technology

JANTXV1N6622US/TR

Analog & Power

DIODE GEN PURP 660V 1.2A D-5A

ActiveSQ-MELF, AAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)660 V
Voltage - Forward (Vf) (Max) @ If1.4 V @ 1.2 A
Current - Average Rectified (Io)1.2A
Current - Reverse Leakage @ Vr500 nA @ 660 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseSQ-MELF, A
Supplier Device PackageD-5A

Environmental

GradeMilitary
Operating Temperature - Junction-65°C ~ 150°C
QualificationMIL-PRF-19500/585