JANTXV1N5416US

Microchip Technology

JANTXV1N5416US

Analog & Power

DIODE GEN PURP 100V 3A D-5B

ActiveSQ-MELF, EAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product Number1N5416
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)150 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 9 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr1 µA @ 100 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseSQ-MELF, E
Supplier Device PackageD-5B

Environmental

GradeMilitary
Operating Temperature - Junction-65°C ~ 175°C
QualificationMIL-PRF-19500/411