JANS1N5806US

Microchip Technology

JANS1N5806US

Analog & Power

DIODE GEN PURP 150V 1A D-5A

ActiveSQ-MELF, AAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product Number1N5806
Capacitance @ Vr, F25pF @ 10V, 1MHz
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)25 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr1 µA @ 150 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseSQ-MELF, A
Supplier Device PackageD-5A

Environmental

GradeMilitary
Operating Temperature - Junction-65°C ~ 175°C
QualificationMIL-PRF-19500/477