JAN1N5804/TR

Microchip Technology

JAN1N5804/TR

Analog & Power

DIODE GEN PURP 100V 2.5A

ActiveA, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F25pF @ 10V, 1MHz
ManufacturerMicrochip Technology
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)25 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If975 mV @ 2.5 A
Current - Average Rectified (Io)2.5A
Current - Reverse Leakage @ Vr1 µA @ 100 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseA, Axial
Supplier Device PackageA, Axial

Environmental

GradeMilitary
Operating Temperature - Junction-65°C ~ 175°C
QualificationMIL-PRF-19500/477