DN3535N8-G

Microchip Technology

DN3535N8-G

Datasheet

Analog & Power

MOSFET N-CH 350V 230MA TO243AA

ActiveTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10Ohm @ 150mA, 0V
FET FeatureDepletion Mode
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage350 V
Drive Voltage (Max Rds On, Min Rds On)0V
Current - Continuous Drain (Id) @ 25°C230mA (Tj)
Max Power Dissipation1.6W (Ta)

Mechanical

Supplier Device PackageTO-243AA (SOT-89)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)