APTM120UM70DAG

Microchip Technology

APTM120UM70DAG

Datasheet

Analog & Power

MOSFET N-CH 1200V 171A SP6

ActiveSP6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 85.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1650 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds43500 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
PackagingBulk
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 30mA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C171A (Tc)
Max Power Dissipation5000W (Tc)

Mechanical

Package / CaseSP6
Supplier Device PackageSP6

Environmental

Operating Temperature-40°C ~ 150°C (TJ)