APTM120DA30CT1G

Microchip Technology

APTM120DA30CT1G

Analog & Power

MOSFET N-CH 1200V 31A SP1

ActiveSP1Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs360mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14560 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
Product StatusActive
SeriesPOWER MOS 8™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 2.5mA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Max Power Dissipation657W (Tc)

Mechanical

PackageBulk
Package / CaseSP1
Supplier Device PackageSP1

Environmental

Operating Temperature-40°C~150°C(TJ)