APTM10DAM05TG

Microchip Technology

APTM10DAM05TG

Analog & Power

MOSFET N-CH 100V 278A SP4

ActiveSP4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 125A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds20000 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 5mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C278A (Tc)
Max Power Dissipation780W (Tc)

Mechanical

PackageBulk
Package / CaseSP4
Supplier Device PackageSP4

Environmental

Operating Temperature-40°C~150°C(TJ)