APTM100UM60FAG

Microchip Technology

APTM100UM60FAG

Analog & Power

MOSFET N-CH 1000V 129A SP6

ActiveSP6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs70mOhm @ 64.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds31100 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 15mA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C129A (Tc)
Max Power Dissipation2272W (Tc)

Mechanical

PackageBulk
Package / CaseSP6
Supplier Device PackageSP6

Environmental

Operating Temperature-40°C~150°C(TJ)