APTM100H35FTG

Microchip Technology

APTM100H35FTG

Analog & Power

MOSFET 4N-CH 1000V 22A SP4

ActiveSP4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs420mOhm @ 11A, 10V
Base Product NumberAPTM100
Configuration4 N-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 25V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 2.5mA

Electrical

Drain-to-Source Voltage1000V (1kV)
Current - Continuous Drain (Id) @ 25°C22A
Power - Max390W

Mechanical

PackageBulk
Package / CaseSP4
Supplier Device PackageSP4

Environmental

Operating Temperature-40°C ~ 150°C (TJ)