APTC60DAM18CTG

Microchip Technology

APTC60DAM18CTG

Analog & Power

MOSFET N-CH 600V 143A SP4

ActiveSP4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 71.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1036 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds28000 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeChassis Mount
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.9V @ 4mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C143A (Tc)
Max Power Dissipation833W (Tc)

Mechanical

PackageBulk
Package / CaseSP4
Supplier Device PackageSP4

Environmental

Operating Temperature-40°C~150°C(TJ)