APT80GA90S

Microchip Technology

APT80GA90S

Analog & Power

IGBT PT MOS 8 SINGLE 900 V 80 A

ActiveTO-268-3, D³Pak (2 Leads + Tab), TO-268AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberAPT80GA90
Gate Charge200 nC
IGBT TypePT
Input TypeStandard
ManufacturerMicrochip Technology
Mounting TypeSurface Mount
Product StatusActive
SeriesPOWER MOS 8®
Switching Energy1.625mJ (on), 1.389mJ (off)
Td (on/off) @ 25°C18ns/149ns
Test Condition600V, 47A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 47A

Electrical

Voltage - Collector Emitter Breakdown (Max)900 V
Current - Collector (Ic) (Max)145 A
Current - Collector Pulsed (Icm)239 A
Power - Max625 W

Mechanical

PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageD3PAK

Environmental

Operating Temperature-55°C~150°C(TJ)