APT1001R1BN

Microchip Technology

APT1001R1BN

Analog & Power

MOSFET N-CH 1000V 10.5A TO247AD

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.1Ohm @ 5.25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2950 pF @ 25 V
ManufacturerMicrochip Technology
Mounting TypeThrough Hole
PackagingTube
Part StatusObsolete
SeriesPOWER MOS IV®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Max Power Dissipation310W (Tc)

Mechanical

Package / CaseTO-247-3
Supplier Device PackageTO-247AD

Environmental

Operating Temperature-55°C ~ 150°C (TJ)